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IKW40T120
IKW40T120
IGBT Chip IKW40T120
Infineon
IKW40T120
--
Diodes, Transistors and Thyristors
IGBT Chip
IKW40T120.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width5.3
Package Height20.95
Package Length15.9
Supplier PackageTO-247
Standard Package NameTO-247
Maximum Power Dissipation (mW)270000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)75
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Chip N-CH 1200V 75A 270000mW 3-Pin(3+Tab) TO-247 Tube
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