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IRG4RC10UPBF
IRG4RC10UPBF
IGBT Chip IRG4RC10UPBF
Infineon
IRG4RC10UPBF
--
Diodes, Transistors and Thyristors
IGBT Chip
IRG4RC10UPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)38000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)8.5
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)2.61
Description
Trans IGBT Chip N-CH 600V 8.5A 38000mW 3-Pin(2+Tab) DPAK
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