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IKW50N65F5AXKSA1
IKW50N65F5AXKSA1
IGBT Chip IKW50N65F5AXKSA1
Infineon
IKW50N65F5AXKSA1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveYes
Lead ShapeThrough Hole
TechnologyTrench Stop 5
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width5.21(Max)
Package Height21.1(Max)
Package Length16.13(Max)
Supplier PackageTO-247
Standard Package NameTO-247
Maximum Power Dissipation (mW)270000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.66
Description
Trans IGBT Chip N-CH 650V 80A 270000mW Automotive 3-Pin(3+Tab) TO-247 Tube
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