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STGWA80H65FB
STGWA80H65FB
IGBT Chip STGWA80H65FB
STMicroelectronics
STGWA80H65FB
--
Diodes, Transistors and Thyristors
IGBT Chip
STGWA80H65FB.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
TechnologyField Stop|Trench
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5
Package Height21
Package Length15.8
Supplier PackageTO-247
Standard Package NameTO-247
Maximum Power Dissipation (mW)469000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)120
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 650V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
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