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IRG4IBC20WPBF
IRG4IBC20WPBF
IGBT Chip IRG4IBC20WPBF
Infineon
IRG4IBC20WPBF
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height16.13(Max)
Package Length10.75(Max)
Supplier PackageTO-220AB Full-Pak
Standard Package NameTO-220
Maximum Power Dissipation (mW)34000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)12
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)2.55
Description
Trans IGBT Chip N-CH 600V 12A 34000mW 3-Pin(3+Tab) TO-220AB Full-Pak Tube
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