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IRG4MC30F
IRG4MC30F
IGBT Chip IRG4MC30F
Infineon
IRG4MC30F
--
Diodes, Transistors and Thyristors
IGBT Chip
IRG4MC30F.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width6.6(Max)
Package Height13.84(Max)
Package Length13.84(Max)
Supplier PackageTO-254AA
Standard Package NameTO-254-AA
Maximum Power Dissipation (mW)75000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)28
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)2.2(Max)
Description
Trans IGBT Chip N-CH 600V 28A 75000mW 3-Pin(3+Tab) TO-254AA
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