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IHW30N100RXK
IHW30N100RXK
IGBT Chip IHW30N100RXK
Infineon
IHW30N100RXK
--
Diodes, Transistors and Thyristors
IGBT Chip
IHW30N100RXK.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width5
Package Height21
Package Length15.8
Supplier PackageTO-247
Standard Package NameTO-247
Maximum Power Dissipation (mW)412000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1000
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.5
Description
Trans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247
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