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IRGB4055PBF
IRGB4055PBF
IGBT Chip IRGB4055PBF
Infineon
IRGB4055PBF
--
Diodes, Transistors and Thyristors
IGBT Chip
IRGB4055PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.82(Max)
Package Height9.02(Max)
Package Length10.66(Max)
Supplier PackageTO-220AB
Standard Package NameTO-220
Maximum Power Dissipation (mW)255000
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)300
Maximum Continuous Collector Current (A)110
Maximum Gate Emitter Leakage Current (uA)0.1
Description
Trans IGBT Chip N-CH 300V 110A 255000mW 3-Pin(3+Tab) TO-220AB
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