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IGBT Chip IRGC4263B
Infineon
IRGC4263B
--
Diodes, Transistors and Thyristors
IGBT Chip
IRGC4263B.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
ECCN (US)EAR99
PackagingWafer
AutomotiveNo
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)48
Typical Collector Emitter Saturation Voltage (V)2.1(Max)
Description
Trans IGBT Chip 650V 48A Wafer
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