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IRGS4640DPBF
IRGS4640DPBF
IGBT Chip IRGS4640DPBF
Infineon
IRGS4640DPBF
--
Diodes, Transistors and Thyristors
IGBT Chip
IRGS4640DPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width9.25
Package Height4.4
Package Length10
Supplier PackageD2PAK
Standard Package NameTO-263
Maximum Power Dissipation (mW)250000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)65
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 600V 65A 250000mW 3-Pin(2+Tab) D2PAK Tube
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