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IGBT Chip NGTD21T65F2WP
onsemi
NGTD21T65F2WP
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | WJAR |
| Pin Count | 3 |
| Automotive | No |
| Technology | Field Stop II|Trench |
| PCB changed | 3 |
| Part Status | Active |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.45 |
| Package Height | 0.08 |
| Package Length | 4.45 |
| Supplier Package | Die |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 650 |
| Maximum Gate Emitter Leakage Current (uA) | 0.2 |
| Typical Collector Emitter Saturation Voltage (V) | 1.7 |
| Description |
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