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SIGC16T120CX1SA3
SIGC16T120CX1SA3
IGBT Chip SIGC16T120CX1SA3
Infineon
SIGC16T120CX1SA3
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
PCB changed3
Part StatusNRND
Channel TypeN
ConfigurationSingle
Package Width4
Package Height0.2
Package Length4.04
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)8
Maximum Gate Emitter Leakage Current (uA)0.12
Typical Collector Emitter Saturation Voltage (V)2.5
Description
Trans IGBT Chip N-CH 1200V 8A 3-Pin Die Wafer
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