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IGBT Chip SIGC57T120R3X1SA1
Infineon
SIGC57T120R3X1SA1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
PCB changed3
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width7.53
Package Height0.14
Package Length7.6
Supplier PackageDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Chip N-CH 1200V 50A 3-Pin Die Wafer
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