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IGBT Chip STG30M65F2D7
STMicroelectronics
STG30M65F2D7
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Type | N |
| Configuration | Single |
| Package Width | 3.6 |
| Package Height | 0.07 |
| Package Length | 4.6 |
| Supplier Package | Die |
| Standard Package Name | Die |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 650 |
| Maximum Continuous Collector Current (A) | 30 |
| Maximum Gate Emitter Leakage Current (uA) | 250 |
| Typical Collector Emitter Saturation Voltage (V) | 1.55 |
| Description |
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