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STGB30V60F
STGB30V60F
IGBT Chip STGB30V60F
STMicroelectronics
STGB30V60F
--
Diodes, Transistors and Thyristors
IGBT Chip
STGB30V60F.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusLTB
Channel TypeN
ConfigurationSingle
Package Width9.35(Max)
Package Height4.6(Max)
Package Length10.4(Max)
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)260000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(2+Tab) D2PAK T/R
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