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STGD5NB120SZ-1
STGD5NB120SZ-1
IGBT Chip STGD5NB120SZ-1
STMicroelectronics
STGD5NB120SZ-1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width2.4(Max)
Package Height6.2(Max)
Package Length6.6(Max)
Supplier PackageIPAK
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)75000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)10
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.3
Description
Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(3+Tab) IPAK Tube
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