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IGBT Chip STGSB200M65DF2AG
STMicroelectronics
STGSB200M65DF2AG
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 9 |
| Automotive | Yes |
| Technology | Field Stop|Trench |
| PCB changed | 9 |
| Part Status | Active |
| Channel Type | N |
| Configuration | Single Triple Collector Triple Emitter |
| Package Width | 23 |
| Package Height | 5.5 |
| Package Length | 25 |
| Supplier Package | SMIT |
| Supplier Temperature Grade | Automotive |
| Maximum Power Dissipation (mW) | 714000 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 650 |
| Maximum Continuous Collector Current (A) | 216 |
| Maximum Gate Emitter Leakage Current (uA) | 0.6 |
| Typical Collector Emitter Saturation Voltage (V) | 1.65 |
| Description |
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