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STGW60H65F
STGW60H65F
IGBT Chip STGW60H65F
STMicroelectronics
STGW60H65F
--
Diodes, Transistors and Thyristors
IGBT Chip
STGW60H65F.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width5.15(Max)
Package Height20.15(Max)
Package Length15.75(Max)
Supplier PackageTO-247
Standard Package NameTO-247
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)360000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)120
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)1.9
Description
Trans IGBT Chip N-CH 600V 120A 360000mW 3-Pin(3+Tab) TO-247 Tube
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