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STGWT15H60F
STGWT15H60F
IGBT Chip STGWT15H60F
STMicroelectronics
STGWT15H60F
--
Diodes, Transistors and Thyristors
IGBT Chip
STGWT15H60F.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.8
Package Height18.7
Package Length15.6
Supplier PackageTO-3P
Standard Package NameTO-3P
Maximum Power Dissipation (mW)115000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)30
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-3P Tube
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