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40MT120UHAPBF
40MT120UHAPBF
IGBT Modules 40MT120UHAPBF
Vishay
40MT120UHAPBF
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
HTS8541.30.00.80
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count12
AutomotiveNo
TechnologyNPT
PCB changed12
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width33
Package Height16
Package Length63.5
Supplier PackageMTP
Maximum Power Dissipation (mW)463
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)4.53
Description
Trans IGBT Module N-CH 1200V 80A 463mW 12-Pin MTP
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