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A1P50S65M2
A1P50S65M2
IGBT Modules A1P50S65M2
STMicroelectronics
A1P50S65M2
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Diodes, Transistors and Thyristors
IGBT Modules
A1P50S65M2.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count22
AutomotiveNo
PCB changed22
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width33.8
Package Height12
Package Length62.8
Supplier PackageACEPACK-1
Maximum Power Dissipation (mW)208000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.5
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Module N-CH 650V 50A 208000mW 22-Pin ACEPACK-1 Tray
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