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FS3L50R07W2H3F_B11
FS3L50R07W2H3F_B11
IGBT Modules FS3L50R07W2H3F_B11
Infineon
FS3L50R07W2H3F_B11
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count32
AutomotiveNo
PCB changed32
Part StatusUnconfirmed
Channel TypeN
ConfigurationArray 12
Package Width56.7
Package Height12
Package Length62.8
Supplier PackageEASY2B-2
Maximum Power Dissipation (mW)215000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Module N-CH 650V 50A 215000mW 32-Pin EASY2B-2 Tray
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