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APT70GR120JD60
APT70GR120JD60
IGBT Modules APT70GR120JD60
Microchip Technology
APT70GR120JD60
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count4
AutomotiveNo
Lead ShapeScrew
TechnologyNon-Punch-Through
PCB changed4
Part StatusActive
Channel TypeN
ConfigurationSingle Dual Emitter
Package Width25.04(Max)
Package Height9.6(Max)
Package Length38.2(Max)
Supplier PackageSOT-227
Maximum Power Dissipation (mW)543
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)112
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)3.5
Description
Trans IGBT Module N-CH 1200V 112A 543mW 4-Pin SOT-227 Tube
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