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APTGF150A120T3AG
APTGF150A120T3AG
IGBT Modules APTGF150A120T3AG
Microchip Technology
APTGF150A120T3AG
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count20
AutomotiveNo
PCB changed20
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width40.8
Package Height11.5
Package Length73.4
Supplier PackageCase SP-3
Maximum Power Dissipation (mW)1041
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)210
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.2
Description
Trans IGBT Module N-CH 1200V 210A 1041mW 20-Pin Case SP-3
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