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APTGF150DH120G
APTGF150DH120G
IGBT Modules APTGF150DH120G
Microchip Technology
APTGF150DH120G
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width62
Package Height15
Package Length108
Supplier PackageCase SP-6
Maximum Power Dissipation (mW)961
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)200
Maximum Gate Emitter Leakage Current (uA)0.5
Typical Collector Emitter Saturation Voltage (V)3.2
Description
Trans IGBT Module N-CH 1200V 200A 961mW 8-Pin Case SP-6
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