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APTGF50DSK120T3G
APTGF50DSK120T3G
IGBT Modules APTGF50DSK120T3G
Microchip Technology
APTGF50DSK120T3G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count16
AutomotiveNo
PCB changed16
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width40.8
Package Height11.5
Package Length73.4
Supplier PackageCase SP-3
Maximum Power Dissipation (mW)312
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)70
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)3.2
Description
Trans IGBT Module N-CH 1200V 70A 312mW 16-Pin Case SP-3
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