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APTGF50VDA60T3G
APTGF50VDA60T3G
IGBT Modules APTGF50VDA60T3G
Microchip Technology
APTGF50VDA60T3G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count20
AutomotiveNo
PCB changed20
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width40.8
Package Height11.5
Package Length73.4
Maximum Power Dissipation (mW)250
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)65
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 600V 65A 250mW 20-Pin
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