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FP15R12W2T4BOMA1
FP15R12W2T4BOMA1
IGBT Modules FP15R12W2T4BOMA1
Infineon
FP15R12W2T4BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusActive
Channel TypeN
ConfigurationHex
Maximum Power Dissipation (mW)145000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)30
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 30A 145000mW Tray
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