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APTGLQ100DA120T1G
APTGLQ100DA120T1G
IGBT Modules APTGLQ100DA120T1G
Microchip Technology
APTGLQ100DA120T1G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count12
AutomotiveNo
TechnologyField Stop|Trench
PCB changed12
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width40.8
Package Height11.5
Package Length51.6
Maximum Power Dissipation (mW)520
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)170
Maximum Gate Emitter Leakage Current (uA)0.15
Typical Collector Emitter Saturation Voltage (V)2.05
Description
Trans IGBT Module N-CH 1200V 170A 520mW 12-Pin Tube
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