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APTGT30H170T3G
APTGT30H170T3G
IGBT Modules APTGT30H170T3G
Microchip Technology
APTGT30H170T3G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count32
AutomotiveNo
PCB changed32
Part StatusActive
Channel TypeN
ConfigurationQuad
Package Width40.8
Package Height11.5
Package Length73.4
Supplier PackageCase SP-3
Maximum Power Dissipation (mW)210
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)45
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 1700V 45A 210mW 32-Pin Case SP-3 Tube
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