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APTGT50SK120TG
APTGT50SK120TG
IGBT Modules APTGT50SK120TG
Microchip Technology
APTGT50SK120TG
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count20
AutomotiveNo
Lead ShapeScrew
PCB changed20
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width40.4
Package Height17.2
Package Length93
Supplier PackageCase SP-4
Maximum Power Dissipation (mW)277
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)75
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 75A 277mW 20-Pin Case SP-4 Tube
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