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APTGT75A1202G
APTGT75A1202G
IGBT Modules APTGT75A1202G
Microchip Technology
APTGT75A1202G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count18
AutomotiveNo
PCB changed18
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width32.5
Package Height16.5
Package Length66
Supplier PackageCase SP-2
Maximum Power Dissipation (mW)357
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)110
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 110A 357mW 18-Pin Case SP-2
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