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FS75R12KT4B15BPSA1
FS75R12KT4B15BPSA1
IGBT Modules FS75R12KT4B15BPSA1
Infineon
FS75R12KT4B15BPSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
PackagingTray
Pin Count28
AutomotiveNo
PCB changed28
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width45
Package Height17
Package Length107.5
Maximum Power Dissipation (mW)385
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)75
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 75A 385mW 28-Pin Tray
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