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APTGT75A120T1G
APTGT75A120T1G
IGBT Modules APTGT75A120T1G
Microchip Technology
APTGT75A120T1G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count12
AutomotiveNo
PCB changed12
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width40.8
Package Height11.5
Package Length51.6
Supplier PackageCase SP-1
Maximum Power Dissipation (mW)357
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)110
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 110A 357mW 12-Pin Case SP-1 Tube
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