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IGBT Modules BSM100GT120DN2
Infineon
BSM100GT120DN2
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
MountingScrew
ECCN (US)EAR99
Pin Count18
AutomotiveNo
PCB changed18
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width61.5
Package Height17
Package Length121.5
Supplier PackageTRIPACK
Maximum Power Dissipation (mW)680000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)150
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.5
Description
Trans IGBT Module N-CH 1200V 150A 680000mW 18-Pin TRIPACK
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