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BSM150GB120DN2
BSM150GB120DN2
IGBT Modules BSM150GB120DN2
Infineon
BSM150GB120DN2
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count7
AutomotiveNo
PCB changed7
Part StatusUnconfirmed
Channel TypeN
ConfigurationDual
Package Width61.4
Package Height30.5
Package Length106.4
Supplier Package62MM-1
Standard Package Name62MM
Maximum Power Dissipation (mW)1250
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)210
Maximum Gate Emitter Leakage Current (uA)0.32
Typical Collector Emitter Saturation Voltage (V)2.5
Description
Trans IGBT Module N-CH 1200V 210A 1250000mW 7-Pin 62MM-1
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