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FZ750R65KE3NOSA1
FZ750R65KE3NOSA1
IGBT Modules FZ750R65KE3NOSA1
Infineon
FZ750R65KE3NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
ECCN (US)3A228.c
PackagingTray
AutomotiveUnknown
Part StatusActive
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)14500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)6500
Maximum Continuous Collector Current (A)750
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3
Description
Trans IGBT Module N-CH 6500V 750A 14500000mW Automotive Tray
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