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BSM150GB60DLCHOSA1
BSM150GB60DLCHOSA1
IGBT Modules BSM150GB60DLCHOSA1
Infineon
BSM150GB60DLCHOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width34
Package Length94
Supplier Package34MM-1
Maximum Power Dissipation (mW)595000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)180
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Module N-CH 600V 180A 595000mW 7-Pin 34MM-1 Tray
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