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FF400R33KF2C
FF400R33KF2C
IGBT Modules FF400R33KF2C
Infineon
FF400R33KF2C
--
Diodes, Transistors and Thyristors
IGBT Modules
FF400R33KF2C.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)3A228.c
PackagingTray
Pin Count10
AutomotiveNo
PCB changed10
Part StatusLTB
Channel TypeN
ConfigurationDual
Package Width130
Package Height38
Package Length160
Supplier PackageIHV130-3
Standard Package NameIHM
Maximum Power Dissipation (mW)4800
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)3300
Maximum Continuous Collector Current (A)660
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Module N-CH 3300V 660A 4800mW 10-Pin IHV130-3 Tray
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