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BSM200GA120DN2HOSA1
BSM200GA120DN2HOSA1
IGBT Modules BSM200GA120DN2HOSA1
Infineon
BSM200GA120DN2HOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)1550000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)300
Maximum Gate Emitter Leakage Current (uA)0.2
Typical Collector Emitter Saturation Voltage (V)2.5
Description
Trans IGBT Module N-CH 1200V 300A 1550000mW
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