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BSM200GB60DLC
BSM200GB60DLC
IGBT Modules BSM200GB60DLC
Infineon
BSM200GB60DLC
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveUnknown
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width34
Package Length94
Supplier Package34MM-1
Maximum Power Dissipation (mW)730000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)230
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Module N-CH 600V 230A 730000mW Automotive 7-Pin 34MM-1 Tray
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