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FS75R12KT4B11BOSA1
FS75R12KT4B11BOSA1
IGBT Modules FS75R12KT4B11BOSA1
Infineon
FS75R12KT4B11BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count25
AutomotiveNo
PCB changed25
Part StatusNRND
Channel TypeN
ConfigurationHex
Package Width45
Package Height17
Package Length107.5
Supplier PackageECONO2-6
Maximum Power Dissipation (mW)385
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)75
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 75A 385000mW 25-Pin ECONO2-6 Tray
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