Welcome to BEAM! Tel: +86-553-5896615
Language: Help
BSM25GD120DN2BOSA1
BSM25GD120DN2BOSA1
IGBT Modules BSM25GD120DN2BOSA1
Infineon
BSM25GD120DN2BOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
AutomotiveNo
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Maximum Power Dissipation (mW)200000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)35
Maximum Gate Emitter Leakage Current (uA)0.18
Typical Collector Emitter Saturation Voltage (V)2.5
Description
Trans IGBT Module N-CH 1200V 35A 200000mW
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13825
Manufacturer: Microchip Technology
Inventory: 0
$0.6959
Manufacturer: Microchip Technology
Inventory: 0
$0.21989
Manufacturer: STMicroelectronics
Inventory: 0
$0.43599
Manufacturer: Texas Instruments
Inventory: 3000
$3.37013
Manufacturer: Texas Instruments
Inventory: 0
$0.02556
Manufacturer: Texas Instruments
Inventory: 3000
$1.32079
Manufacturer: Texas Instruments
Inventory: 6000
$1.06515
Manufacturer: STMicroelectronics
Inventory: 1920
$3.515
Manufacturer: ADI
Inventory: 0
$1.4047