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IGBT Modules BSM50GP120
Infineon
BSM50GP120
--
Diodes, Transistors and Thyristors
IGBT Modules
BSM50GP120.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count24
AutomotiveNo
PCB changed24
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width62
Package Height17
Package Length122
Supplier PackageECONO3-3
Standard Package NameEconoPIM3
Maximum Power Dissipation (mW)360000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.3
Typical Collector Emitter Saturation Voltage (V)2.2
Description
Trans IGBT Module N-CH 1200V 80A 360000mW 24-Pin ECONO3-3
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