Welcome to BEAM! Tel: +86-553-5896615
Language: Help
DF300R12KE3HOSA1
DF300R12KE3HOSA1
IGBT Modules DF300R12KE3HOSA1
Infineon
DF300R12KE3HOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count5
AutomotiveUnknown
PCB changed5
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width61.4
Package Height30.9
Package Length106.4
Supplier Package62MM-1
Maximum Power Dissipation (mW)1470000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)480
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 480A 1470000mW Automotive 5-Pin 62MM-1 Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13827
Manufacturer: Microchip Technology
Inventory: 0
$0.696
Manufacturer: Microchip Technology
Inventory: 0
$0.21992
Manufacturer: STMicroelectronics
Inventory: 0
$0.43605
Manufacturer: Texas Instruments
Inventory: 3000
$3.37061
Manufacturer: Texas Instruments
Inventory: 0
$0.02557
Manufacturer: Texas Instruments
Inventory: 3000
$1.32097
Manufacturer: Texas Instruments
Inventory: 6000
$1.0653
Manufacturer: STMicroelectronics
Inventory: 1920
$3.51549
Manufacturer: ADI
Inventory: 0
$1.4049