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F3L200R07PE4BOSA1
F3L200R07PE4BOSA1
IGBT Modules F3L200R07PE4BOSA1
Infineon
F3L200R07PE4BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count20
AutomotiveUnknown
PCB changed20
Part StatusActive
Channel TypeN
ConfigurationQuad
Package Width103
Package Height17
Package Length130
Supplier PackageECONO4-1
Maximum Power Dissipation (mW)680000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)200
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.55
Description
Trans IGBT Module N-CH 650V 200A 680000mW Automotive 20-Pin ECONO4-1 Tray
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