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FF600R12KE4
FF600R12KE4
IGBT Modules FF600R12KE4
Infineon
FF600R12KE4
--
Diodes, Transistors and Thyristors
IGBT Modules
FF600R12KE4.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTray
AutomotiveNo
TechnologyTrench|Field Stop
Part StatusUnconfirmed
Channel TypeN
ConfigurationDual
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)600
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Module N-CH 1200V 600A Tray
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