Welcome to BEAM! Tel: +86-553-5896615
Language: Help
F4100R12KS4BOSA1
F4100R12KS4BOSA1
IGBT Modules F4100R12KS4BOSA1
Infineon
F4100R12KS4BOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count26
AutomotiveNo
PCB changed26
Part StatusActive
Channel TypeN
ConfigurationQuad
Package Width62
Package Height17
Package Length122
Supplier PackageECONO3-4
Maximum Power Dissipation (mW)660000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)130
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.2
Description
Trans IGBT Module N-CH 1200V 130A 660000mW 26-Pin ECONO3-4 Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13815
Manufacturer: Microchip Technology
Inventory: 0
$0.69541
Manufacturer: Microchip Technology
Inventory: 0
$0.21974
Manufacturer: STMicroelectronics
Inventory: 0
$0.43568
Manufacturer: Texas Instruments
Inventory: 3000
$3.36776
Manufacturer: Texas Instruments
Inventory: 0
$0.02555
Manufacturer: Texas Instruments
Inventory: 3000
$1.31986
Manufacturer: Texas Instruments
Inventory: 6000
$1.0644
Manufacturer: STMicroelectronics
Inventory: 1920
$3.51252
Manufacturer: ADI
Inventory: 0
$1.40371