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F4150R12KS4BOSA1
F4150R12KS4BOSA1
IGBT Modules F4150R12KS4BOSA1
Infineon
F4150R12KS4BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count26
AutomotiveNo
PCB changed26
Part StatusActive
Channel TypeN
ConfigurationQuad
Package Width62
Package Height17
Package Length122
Supplier PackageECONO3-4
Maximum Power Dissipation (mW)960000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)180
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.2
Description
Trans IGBT Module N-CH 1200V 180A 960000mW 26-Pin ECONO3-4 Tray
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