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F430R06W1E3BOMA1
F430R06W1E3BOMA1
IGBT Modules F430R06W1E3BOMA1
Infineon
F430R06W1E3BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count15
AutomotiveNo
PCB changed15
Part StatusObsolete
Channel TypeN
ConfigurationQuad
Package Width33.8
Package Height12
Package Length62.8
Supplier PackageEASY1B-1
Maximum Power Dissipation (mW)165000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)48
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.55
Description
Trans IGBT Module N-CH 600V 48A 165000mW 15-Pin EASY1B-1 Tray
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